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A novel 0.7 V two-port 6T SRAM memory cell structure with single-bit-line simultaneous read-and-write access (SBLSRWA) capability using partially-depleted SOI CMOS dynamic-threshold technique

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2 Author(s)
Liu, S.C. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Kuo, J.B.

Summary form only given. This paper reports a novel low-voltage two-port 6T SRAM memory cell structure with single-bit-line simultaneous read-and-write access capability using a partially-depleted SOI CMOS dynamic-threshold technique. With an innovative approach connecting the body terminal of an NMOS device in the latch and the write access pass transistor to the write word line, this 6T memory cell can be used to provide SBLSRWA capability for 0.7 V two-port SOI CMOS VLSI SRAM, as verified by MEDICI results.

Published in:

SOI Conference, 1999. Proceedings. 1999 IEEE International

Date of Conference:

4-7 Oct. 1999