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A body-contact SOI MOSFET model for circuit simulation

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4 Author(s)
Su, P. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Fung, S.K.H. ; Assaderaghi, F. ; Hu, C.

Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.

Published in:

SOI Conference, 1999. Proceedings. 1999 IEEE International

Date of Conference:

4-7 Oct. 1999

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