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98-GHz InP/InGaAs HBT amplifier with 26-dB gain

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6 Author(s)
Morf, T. ; Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland ; Hubscher, S. ; Huber, D. ; Huber, A.
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In this work the design and characterization of an InP/InGaAs single heterojunction bipolar transistor (HBT) W-band amplifier is described. The amplifier achieves 26-dB gain at 98 GHz with a bandwidth of 3.1 GHz. On-wafer S-parameter and gain compression measurements are presented. The goal was to explore high gain HBT-amplifiers around 100 GHz. No comparable HBT amplifier at these frequencies could be found in the literature

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:9 ,  Issue: 12 )