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X-band RF MEMS phase shifters for phased array applications

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5 Author(s)
Malczewski, A. ; Raytheon Syst. Co., Dallas, TX, USA ; Eshelman, S. ; Pillans, B. ; Ehmke, J.
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In this work, development of a low-loss radio frequency (RF) microelectromechanical (MEMS) 4-bit X-band monolithic phase shifter is presented. These microstrip circuits are fabricated on 0.021-in-thick high-resistivity silicon and are based on a reflection topology using 3-dB Lange couplers. The average insertion loss of the circuit is 1.4 dB with the return loss >11 dB at 8 GHz. To the best of our knowledge, this is a lowest reported loss for X-band phase shifter and promises to greatly reduce the cost of designing and building phase arrays

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:9 ,  Issue: 12 )