Referenced Items are not available for this document.
Hot carrier lifetime, gate oxide integrity, and radiation response of a 5 nm nitrided gate oxide were evaluated for 0.25 /spl mu/m SOI CMOS devices intended for use in 2.5 V applications and high radiation environments. The devices were fabricated in a new SOI substrate called UNIBOND-170. It is found that the DC hot electron lifetime of the devices exceed 10 years at the operating voltage. Good gate oxide integrity and radiation hardening up to 1 Mrad are shown to make this technology promising for radiation-hard ULSI applications.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:46
,
Issue:
6
)
Date of Publication: Dec. 1999
- Page(s):
- 1824 - 1829
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 6501209
- Digital Object Identifier :
- 10.1109/23.819160
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec. 1999
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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