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Hot carrier lifetime, gate oxide integrity, and radiation response of a 5 nm nitrided gate oxide were evaluated for 0.25 /spl mu/m SOI CMOS devices intended for use in 2.5 V applications and high radiation environments. The devices were fabricated in a new SOI substrate called UNIBOND-170. It is found that the DC hot electron lifetime of the devices exceed 10 years at the operating voltage. Good gate oxide integrity and radiation hardening up to 1 Mrad are shown to make this technology promising for radiation-hard ULSI applications.
Date of Publication: Dec. 1999