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Proton damage effects on p-channel CCDs

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1 Author(s)
G. R. Hopkinson ; Sira Electro-Opt. Ltd., Chislehurst, UK

An experimental batch of p-buried channel CCDs has been fabricated and characterised for proton-induced radiation damage. Dark current effects were similar to conventional n-channel CCDs, but radiation-induced changes in charge transfer inefficiency were reduced by approximately a factor 3 for -30/spl deg/C operation and background signal /spl sim/2000 electrons/pixel; though this is a lower limit and further reduction may be possible in future CCD batches.

Published in:

IEEE Transactions on Nuclear Science  (Volume:46 ,  Issue: 6 )