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Study of dose effects on IGBT-type devices subjected to gamma irradiation

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3 Author(s)
M. Marceau ; CEA, Centre d'Etudes Nucleaires de Saclay, Gif-sur-Yvette, France ; C. Brisset ; M. da Costa

This document describes the characterization tests performed on an IGBT transistor, International Rectifier model IRGP450UD2. It also provides an analysis of IGBT behavior, using an electrical model and a PSPICE simulator.

Published in:

IEEE Transactions on Nuclear Science  (Volume:46 ,  Issue: 6 )