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We evaluate the hole trapping response of twenty-two oxides subjected to twenty-two different sets of processing parameters. The oxides were prepared in three different facilities, the Harris Semiconductor-Intersil Palm Bay facility, the former Naval Research and Development Laboratory (NRAD) 4" facility, and the new SPAWAR 6" fabrication facility in San Diego, California. In twenty of the twenty-two cases, oxide hole trapping is almost completely determined by the highest processing temperature and is in reasonable agreement with a recently proposed physically based predictive model. We have also evaluated Si/SiO/sub 2/ interface trap (D/sub it/) generation in a subset of four very simply processed oxides utilized in the hole trapping study. The D/sub it/ results are also in reasonable agreement with the recently proposed model. Our results indicate that it is possible to make reasonably accurate predictions of radiation response from processing parameters and that such predictions can be made with our current understanding of radiation damage phenomena. (It should be emphasized that the current level of understanding is not yet complete. This work does not demonstrate that precise predictions involving all imaginable process parameters are possible.).