By Topic

Predicting radiation response from process parameters: Verification of a physically based predictive model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Lenahan, P.M. ; Pennsylvania State Univ., University Park, PA, USA ; Mele, J.J. ; Conley, J.F. ; Lowry, R.K.
more authors

We evaluate the hole trapping response of twenty-two oxides subjected to twenty-two different sets of processing parameters. The oxides were prepared in three different facilities, the Harris Semiconductor-Intersil Palm Bay facility, the former Naval Research and Development Laboratory (NRAD) 4" facility, and the new SPAWAR 6" fabrication facility in San Diego, California. In twenty of the twenty-two cases, oxide hole trapping is almost completely determined by the highest processing temperature and is in reasonable agreement with a recently proposed physically based predictive model. We have also evaluated Si/SiO/sub 2/ interface trap (D/sub it/) generation in a subset of four very simply processed oxides utilized in the hole trapping study. The D/sub it/ results are also in reasonable agreement with the recently proposed model. Our results indicate that it is possible to make reasonably accurate predictions of radiation response from processing parameters and that such predictions can be made with our current understanding of radiation damage phenomena. (It should be emphasized that the current level of understanding is not yet complete. This work does not demonstrate that precise predictions involving all imaginable process parameters are possible.).

Published in:

Nuclear Science, IEEE Transactions on  (Volume:46 ,  Issue: 6 )