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Analysis of the influence of MOS device geometry on predicted SEU cross sections

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4 Author(s)
Warren, K. ; Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA ; Massengill, L. ; Schrimpf, R. ; Barnaby, H.

An investigation into the single-event sensitive area geometry of a body-tied-to-source (BTS) SOI nMOS transistor has been performed through a novel simulation technique. Results are presented which demonstrate the influence of spatial variations in charge collection efficiency on the shape of the predicted upset cross section curve. Observations are made on a technique for inferring sensitive area or intra-cell collection efficiencies from cross section data.

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Nuclear Science, IEEE Transactions on  (Volume:46 ,  Issue: 6 )