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Selective MOVPE technique and its applications for photonic devices

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1 Author(s)
Sasaki, T. ; Optoelectron. & High-Frequency Device Res. Lab., NEC Corp., Ibaraki, Japan

The selective growth technique on a mask-patterned planar substrate has attracted much attention because it enables simple integration of thickness-tapered waveguides as well as bandgap-energy control in waveguide layers. Moreover, narrow-stripe selective MOVPE enables the formation of active/passive waveguide layers without a mesa-etching process, which is an attractive approach to the fabrication of photonic devices. The paper reviews this technique, and discusses several device applications.

Published in:

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on  (Volume:3 )

Date of Conference:

Aug. 30 1999-Sept. 3 1999