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A new model for the description of gate voltage and temperature dependence of gate induced drain leakage (GIDL) in the low electric field region [DRAMs]

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3 Author(s)
Rosar, M. ; Siemens SA, Corbeil-Essonnes, France ; Leroy, Bernard ; Schweeger, Giorgio

Gate induced drain leakage (GIDL) is frequently described by band-to-band tunneling. This mechanism is insensitive to temperature and occurs only under strong electric fields. Under the condition of small electric fields, however, GIDL exhibits a strong dependence on temperature, which is due to trap-assisted generation of electron hole pairs. This generation mechanism is based on the Shockley-Read-Hall (SRH) equation involving field dependent emission probabilities due to Fowler-Nordheim (FN) and Poole-Frenkel effect. The proposed model of an acceptor-like interface trap is able to reproduce the experimental results. Temperature and voltage dependencies for a p-MOSFET are correctly calculated for one single fitting parameter, i.e., the interface trap density corresponding to Nt=1×1014 (1/eV m2)

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Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 1 )