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Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFETs

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3 Author(s)
Xu, J.P. ; Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China ; Lai, P.T. ; Cheng, Y.C.

AC-stress-induced degradation of 1/f noise is investigated for n-MOSFETs with thermal oxide or nitrided oxide as gate dielectric, and the physical mechanisms involved are analyzed. It is found that the degradation of 1/f noise under AC stress is far more serious than that under DC stress. For an ac stress of VG=0~0.5 VD, generations of both interface states (ΔDit) and neutral electron traps (ΔNet) are responsible for the increase of 1/f noise, with the former being dominant. For another AC stress of V G=0~VD. a large increase of 1/f noise is observed for the thermal-oxide device, and is attributed to enhanced ΔNet and generation of another specie of electron traps, plus a small amount of ΔDit. Moreover, under the two types of AC stress conditions, much smaller degradation of 1/f noise is observed for the nitrided device due to considerably improved oxide/Si interface and near-interface oxide qualities associated with interfacial nitrogen incorporation

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 1 )

Date of Publication:

Jan 2000

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