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Study and fabrication of PIN photodiode by using ZnSe/PS/Si structure

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2 Author(s)
C. C. Chang ; Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Taipei, Taiwan ; C. H. Lee

In this experiment, the PIN photodiode by using ZnSe/porous Si/Si structure was investigated. The single crystal ZnSe epilayer is successfully grown on porous silicon substrate with CVD system. Indium is as a dopant to reduce the resistivity of ZnSe intrinsic layer. To control the different thickness of n-ZnSe layer will change the photocurrent and responsivity of the ZnSe PIN diode. The best diffusion conditions are diffusion temperature of 300°C and driving time of 30 min. The responsivity of device is 0.03 A/W. In addition, the dark current of the photodiode is near zero

Published in:

IEEE Transactions on Electron Devices  (Volume:47 ,  Issue: 1 )