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MOSFET 1/f noise measurement under switched bias conditions

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5 Author(s)
van der Wel, A.P. ; MESA Res. Inst., Twente Univ., Enschede, Netherlands ; Klumperink, E.A.M. ; Gierkink, S.L.J. ; Wassenaar, R.F.
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A new measurement setup is presented that allows the observation of 1/f noise spectra in MOSFET's under switched bias conditions in a wide frequency band (10 Hz-100 kHz). When switching between inversion and accumulation, MOSFET's of different manufacturers invariably show reduced 1/f noise power density for frequencies below the switching frequency. At low frequencies (10 Hz), a 5-8 dB reduction in intrinsic 1/f noise power density is found for different devices, largely independent of the switching frequency (up to 1 MHz). The switched bias measurements render detailed wideband 1/f noise spectra of switched MOSFET's, which is useful for 1/f noise model validation and analog circuit design.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 1 )