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A BSIM3-based flat-band voltage perturbation model for RTS and 1/f noise

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4 Author(s)
Martin, S. ; Conexant, Newport Beach, CA, USA ; Li, G.P. ; Guan, H. ; D'Souza, S.

Recently, a new random telegraph signal (RTS) noise model for the drain current fluctuations (/spl Delta/I/sub d/) associated with single-carrier trapping and detrapping has been developed from a flat-hand voltage perturbation (/spl Delta/V/sub fb/) of the BSIM3 current-voltage (I-V) model (Martin et al., 1997). The model's accuracy in predicting the gate bias and geometry dependence of RTS magnitudes has been verified and summarized. In this letter, the perturbation model has been extended to yield a new formulation for the scattering coefficient (/spl alpha/) which predicts the magnitude and bias dependence of 1/f noise without fitting parameters. The absence of fitting parameters allows for a direct determination of the oxide trap density (N/sub t/(E/sub fn/)) from 1/f noise measurements. Results suggest that the BSIM3-based model accurately predicts the bias and geometry dependence of 1/f noise, that N/sub 2/O annealing may significantly increase the oxide trap density at strong inversion and that the bias dependence of N/sub t/(E/sub fn/) contains most of the 1/f noise dependence upon V/sub g/.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 1 )