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Impact of ultrashallow junction on hot carrier degradation of sub-0.25-μm nMOSFETs

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3 Author(s)
Nakamura, K. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Murakami, Eiichi ; Kimura, S.

We have investigated the hot carrier (HC) reliability of nMOSFETs with an ultrashallow source/drain (S/D) extension, and found that lightly doped drain (LDD)-type HC degradation is accelerated. The lifetime strongly depends on the extension implantation dose or the implantation angle. A reduced overlap region between the gate electrode and drain diffusion seemed to exaggerate the LDD-type HC degradation. Angled implantation at over 10/spl deg/ effectively suppressed the degradation.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 1 )