By Topic

Thermal rollover characteristics up to 150/spl deg/C of buried-stripe type 980-nm laser diodes with a current injection window delineated by a SiNx layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
H. Horie ; Opto-Electron. Res. & Technol. Dev. Center, Mitsubishi Chem. Corp., Ibaraki, Japan ; Y. Yamamoto ; N. Arai ; H. Ohta

In order to improve device robustness of buried-stripe type 980-nm laser diodes against excess current injection even under high temperature operation, we have introduced a current injection window delineated by a SiN/sub x/ layer to suppress current injection near the facets. The devices showed complete thermal rollover characteristics at temperatures up to 150/spl deg/C with 800-mA continuous-wave current injection while devices without the layer failed due to front facet degradation during high temperature tests. We think the improvement of device robustness with a SiN/sub x/ layer is attributable to suppression of nonradiative recombination of carriers overflowing from the active layers near the facet and to reduced light absorption at the facet brought about by suppression of carrier-induced bandgap shrinkage.

Published in:

IEEE Photonics Technology Letters  (Volume:12 ,  Issue: 1 )