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High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy

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6 Author(s)
Kageyama, T. ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan ; Miyamoto, T. ; Makino, S. ; Nishiyama, N.
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High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was from 1.20 to 1.27 /spl mu/m with different composition at room temperature. The highest lasing operation temperature up to 170/spl deg/C and a high characteristic temperature of 270 K were obtained for 300-/spl mu/m-long lasers at 1.2 /spl mu/m.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 1 )

Date of Publication:

Jan. 2000

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