Cart (Loading....) | Create Account
Close category search window
 

High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kageyama, T. ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan ; Miyamoto, T. ; Makino, S. ; Nishiyama, N.
more authors

High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was from 1.20 to 1.27 /spl mu/m with different composition at room temperature. The highest lasing operation temperature up to 170/spl deg/C and a high characteristic temperature of 270 K were obtained for 300-/spl mu/m-long lasers at 1.2 /spl mu/m.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 1 )

Date of Publication:

Jan. 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.