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High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy

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6 Author(s)
Kageyama, T. ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan ; Miyamoto, T. ; Makino, S. ; Nishiyama, N.
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High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was from 1.20 to 1.27 μm with different composition at room temperature. The highest lasing operation temperature up to 170/spl deg/C and a high characteristic temperature of 270 K were obtained for 300-μm-long lasers at 1.2 μm.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 1 )