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Efficient continuous-wave lasing operation of a narrow-stripe oxide-confined GaInNAs-GaAs multiquantum-well laser grown by MOCVD

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3 Author(s)
Kai Yang ; Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA ; Hains, C.P. ; Cheng, Julian

Efficient continuous-wave lasing operation has been achieved above room temperature by a triple-quantum-well GaInNAs-GaAs laser diode grown on a 6/spl deg/-misoriented GaAs substrate by MOCVD. Using a planar, oxide-confined, narrow-stripe (8 /spl mu/m) laser geometry, continuous-wave lasing operation was achieved over a wide range of temperatures up to 57/spl deg/C. At room temperature, lasing occurs at a wavelength of 1.16 /spl mu/m, with a high single-facet slope efficiency of 25% and a threshold current density of 1.3 kA/cm/sup 2/.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 1 )

Date of Publication:

Jan. 2000

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