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DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures

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3 Author(s)
Raman, V.K. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Viswanathan, C.R. ; Kim, M.E.

The DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBTs) have been investigated at room temperature and at temperatures down to 5 K. The collector current dependence of the current gain was investigated at various temperatures. The low-frequency noise characteristics exhibit both 1/f and generation-recombination components. The noise characteristics are sensitive to changes in base current and insensitive to changes in collector-emitter voltage, thus suggesting that the noise source is located in the vicinity of the emitter-base heterojunction. The noise spectrum follows a simple model based on minority carrier trapping effects at the heterointerface

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:39 ,  Issue: 6 )

Date of Publication:

Jun 1991

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