Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator

The charge pumping technique was applied to MOS p-i-n diodes and used to characterize silicon-on-insulator films synthesized by oxygen implantation. The flatband and threshold voltages, effective channel length, capture cross sections, and densities of traps at the front and back interfaces were extracted. The parameters of the charge pumping phenomenon were systematically studied, and the ranges of validity are discussed. A parasitic component, due to an excess recombination of mobile carriers, occurs for very short transients during both the rise and fall of the gate pulse. It is demonstrated that the carrier reservoirs situated at the back interface play a significant role. Other specific features related to the dual-gate operation and interface coupling in silicon-on-insulator films are presented. An improved model is developed for the interpretation of the interface state profile in the energy gap.<
>