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Studies of diffused boron emitters: saturation current, bandgap narrowing, and surface recombination velocity

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2 Author(s)
R. R. King ; Solid State Electron. Lab., Stanford Univ., CA, USA ; R. M. Swanson

The emitter saturation current density, J0 was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity, s, which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J 0 measurements, the apparent bandgap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO2 interface was extracted for surface boron concentrations from 3×1017 to 3×1019 cm-3

Published in:

IEEE Transactions on Electron Devices  (Volume:38 ,  Issue: 6 )