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A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation

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3 Author(s)
Chung, J.E. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Ko, P.-K. ; Chenming Hu

A simple model for the hot-electron degradation of MOSFET linear-current drive is developed on the basis of the reduction of the inversion-layer mobility due to the generation of interface states. The model can explain the observed dependence of the device hot-electron lifetime on the effective channel length and oxide thickness by taking into account both the relative nonscalability of the localized damage region and the dependence of the linear-current degradation on the effective vertical electric field Eeff. The model is verified for deep-submicrometer non-LDD n-channel MOSFETs with Leff=0.2-1.5 μm and Tox=3.6-21.0 nm. From the correlation between linear-current and charge-pumping degradation, the scattering coefficient α, which relates the number of generated interface states to the corresponding amount of inversion-layer mobility reduction, can be extracted and its dependence on Eeff determined. Using this linear-current degradation model, existing hot-electron lifetime prediction models are modified to account explicitly for the effects of Leff and T ox

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Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 6 )