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Numerical small-signal AC modeling of deep-level-trap related frequency-dependent output conductance and capacitance for GaAs MESFET's on semi-insulating substrates

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2 Author(s)
Li, Q. ; Dept. of Electr. Eng., Stanford Univ., CA, USA ; Dutton, R.W.

A two-dimensional numerical deep-level-trap (DLT) model suitable for small-signal AC analysis is described. The model reproduces the experimentally observed frequency-dependent output conductance for a GaAs MESFET on a semi-insulating substrate, clarifies the relations between the frequency characteristics and trap parameters, and identifies two trap levels with proper energy separation supported by DLTS measurement. The model also predicts some frequency-dependent output capacitance contributed by the two trap levels

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 6 )