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Thin nitride-capped poly-resistor for high density and high performance SRAM with self-aligned-contact

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6 Author(s)
Dun-Nian Yaung ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Yean-Kuen Fang ; Kuo-Ching Huang ; Shou-Gwo Wuu
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A thin (45 Å) nitride-capped poly-resistor is presented which is compatible with the self-aligned-contact process owing to the use of high-temperature RTP annealing just after nitride deposition without pattern definition. It has several advantages, including a simple structure and fabrication process, tight control of the high poly-resistance and better I-V linearity

Published in:

Electronics Letters  (Volume:35 ,  Issue: 24 )