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Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN-based light sources

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3 Author(s)
P. D. Floyd ; Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA ; D. W. Treat ; D. P. Bour

Arrays of integrated red, infrared and blue light emitters fabricated using wafer fusion of GaAs-based laser structures to GaN-based light-emitting diode (LED) heterostructures are demonstrated. Successful operation of red and infrared lasers fused to functioning GaN LEDs has been achieved. Infrared, AlGaInAs QW lasers (4×500 μm) operating with a threshold current (Ith) of 40 mA and external differential quantum efficiency (nd) of 11.5%/facet at ~821 nm are shown. Red, GaInP QW lasers (4×500 μm) operating with an Ith of 118 mA and ηd of 18.7/facet at ~660 nm are also shown. The adjacent InGaN/GaN LED emits at 446 nm

Published in:

Electronics Letters  (Volume:35 ,  Issue: 24 )