Referenced Items are not available for this document.
Arrays of integrated red, infrared and blue light emitters fabricated using wafer fusion of GaAs-based laser structures to GaN-based light-emitting diode (LED) heterostructures are demonstrated. Successful operation of red and infrared lasers fused to functioning GaN LEDs has been achieved. Infrared, AlGaInAs QW lasers (4×500 μm) operating with a threshold current (Ith) of 40 mA and external differential quantum efficiency (nd) of 11.5%/facet at ~821 nm are shown. Red, GaInP QW lasers (4×500 μm) operating with an Ith of 118 mA and ηd of 18.7/facet at ~660 nm are also shown. The adjacent InGaN/GaN LED emits at 446 nm
Published in:
Electronics Letters
(Volume:35
,
Issue:
24
)
Date of Publication: 25 Nov 1999
- Page(s):
- 2120 - 2121
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 6444110
- Digital Object Identifier :
- 10.1049/el:19991456
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 25 Nov 1999
- Sponsored by :
- Institution of Engineering and Technology
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