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Determination of XUV optical constants by reflectometry using a high-repetition rate 46.9-nm laser

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6 Author(s)
Artioukov, I.A. ; Lebedev (P.N.) Phys. Inst., Moscow, Russia ; Benware, B.R. ; Rocca, J.J. ; Forsythe, M.
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We report the measurement of the optical constants of Si, GaP, InP, GaAs, GaAsP, and Ir at a wavelength of 46.9 nm (26.5 eV). The optical constants were obtained from the measurement of the variation of the reflectivity as a function of angle utilizing, as an illumination source, a discharge pumped 46.9-nm table-top laser operated at a repetition rate of 1 Hz. These measurements constitute the first application of an ultrashort wavelength laser to materials research

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 6 )