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Browse Conference Publications > Lasers and Electro-Optics, 19 ... Help

Effect of electron-hole interaction on electron spin relaxation in GaAs-AlGaAs quantum wells

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6 Author(s)
Gotoh, H. ; NTT Basic Res. Labs., Atsugi, Japan ; Ando, H. ; Sogawa, T. ; Kamada, H.
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We measured electron spin relaxation with changing the spatial electron-hole (e-h) separation by applying an electric field in GaAs-AlGaAs quantum wells at room temperature (RT). Even though the electron spin relaxation at RT was previously believed to be independent of any e-h interactions, we found that the electron spin relaxation was drastically suppressed with an increase in the spatial e-h separation. We used a vertical-cavity surface-emitting laser with a separate confinement heterostructure (SCH-VCSEL) having a GaAs-AlGaAs quantum-well (QW) structure in the active region. The photoluminescence (PL) spectrum from the optically excited SCH-VCSEL is shown.

Published in:
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on  (Volume:4 )

Date of Conference: Aug. 30 1999-Sept. 3 1999

Page(s):
1328 - 1329 vol.4
Meeting Date :
30 Aug 1999-03 Sep 1999
Print ISBN:
0-7803-5661-6
INSPEC Accession Number:
6551867
Conference Location :
Seoul, South Korea
Digital Object Identifier :
10.1109/CLEOPR.1999.814799
Product Type:
Conference Publications

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