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Implantation-induced intermixing in GaAs/AlGaAs quantum well structures and its application to quantum well lasers

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4 Author(s)
Tan, H.H. ; Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia ; Jagadish, C. ; Johnston, M.B. ; Gal, M.

We demonstrate the use of ion implantation to induce intermixing of GaAs/AlGaAs quantum wells. The influence of various parameters such as implantation dose and temperature, annealing conditions and Al mole fraction are presented. Finally, the application of this technique to tune the lasing wavelength of GRINSCH laser diodes is demonstrated.

Published in:

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on  (Volume:4 )

Date of Conference:

Aug. 30 1999-Sept. 3 1999