By Topic

Implantation-induced intermixing in GaAs/AlGaAs quantum well structures and its application to quantum well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tan, H.H. ; Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia ; Jagadish, C. ; Johnston, M.B. ; Gal, M.

We demonstrate the use of ion implantation to induce intermixing of GaAs/AlGaAs quantum wells. The influence of various parameters such as implantation dose and temperature, annealing conditions and Al mole fraction are presented. Finally, the application of this technique to tune the lasing wavelength of GRINSCH laser diodes is demonstrated.

Published in:

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on  (Volume:4 )

Date of Conference:

Aug. 30 1999-Sept. 3 1999