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Low-voltage high driving capability CMOS buffer used in MEMS interface circuits

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3 Author(s)
Yajun Ha ; Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore ; Li, M.-F. ; Ai Qun Liu

A class-AB low voltage high driving capability CMOS buffer amplifier using improved quasi-complementary output stage and error amplifiers with adaptive loads is developed. Improved quasi-complementary output stage makes it more suitable for low voltage applications, while adaptive load in error amplifier is used to increase the driving capability and reduce the sensitivity of the quiescent current to process variation. The circuit has been fabricated in 0.8 μm CMOS process. With 300 Ω load in a ±1.5 V supply, its output swing is 2.42 V. The mean value of quiescent current for eight samples is 204 μA, with the worst deviation of 17%

Published in:

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on  (Volume:3 )

Date of Conference:

1999