By Topic

A high Q RF CMOS differential active inductor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
R. Akbari-Dilmaghani ; Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK ; A. Payne ; C. Toumazou

This paper presents the design of a differential CMOS active inductor for use in applications around 1-1.7 GHz. The architecture is based on a gyrator-C topology, where tuneable compensation techniques are applied to reduce phase error due to additional device parasitics, thus extending the useable frequency range of the inductor closer to the ft of the technology. The inductance value and quality factor are also independently tuneable, and simulation results using device parameters from the AMS 0.8 μm CMOS process demonstrate operation at 1.5 GHz with a Q of over 300. The implementation of a tuneable bandpass filter using the inductor is also demonstrated

Published in:

Electronics, Circuits and Systems, 1998 IEEE International Conference on  (Volume:3 )

Date of Conference: