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A high Q RF CMOS differential active inductor

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3 Author(s)
R. Akbari-Dilmaghani ; Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK ; A. Payne ; C. Toumazou

This paper presents the design of a differential CMOS active inductor for use in applications around 1-1.7 GHz. The architecture is based on a gyrator-C topology, where tuneable compensation techniques are applied to reduce phase error due to additional device parasitics, thus extending the useable frequency range of the inductor closer to the ft of the technology. The inductance value and quality factor are also independently tuneable, and simulation results using device parameters from the AMS 0.8 μm CMOS process demonstrate operation at 1.5 GHz with a Q of over 300. The implementation of a tuneable bandpass filter using the inductor is also demonstrated

Published in:

Electronics, Circuits and Systems, 1998 IEEE International Conference on  (Volume:3 )

Date of Conference:

1998