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The design of 2 V 1 GHz CMOS low-noise bandpass amplifier with good temperature stability and low power dissipation

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3 Author(s)
Chung-Yu Wu, Ph.D. ; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Jeng Gong ; Yn Cheng

A 1 GHz low-noise low-power bandpass amplifier suitable for RF front-end applications in wireless communication receivers is proposed and analyzed. A novel temperature compensation circuit is used to stabilize the amplifier gain so that the overall amplifier has good temperature stability. Moreover, a compact tunable positive-feedback circuit is connected to the integrated spiral inductor to generate negative resistance and enhance its Q value. A simple diode varactor circuit is adopted for center frequency tuning. These improved circuits reduce the power dissipation of the amplifier. HSPICE simulation has been extensively performed to verify the performance of the designed amplifier. The results show a gain of 26 dB at Q=30 under 2 V power supply with 35 mW power dissipation. The noise figure is 5 dB in the passband. The tunable frequency range is between 950 MHz and 1050 MHz. The gain variation is less than 4 dB in the range of 0°C to 80°C. Suitable noise figure and amplifier gain, low power dissipation, and good temperature stability makes the proposed bandpass amplifier quite feasible in RF front-end applications

Published in:

Electronics, Circuits and Systems, 1998 IEEE International Conference on  (Volume:3 )

Date of Conference:

1998