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Molecular dynamics study of implant and damage formation in low-energy boron cluster ion implantation

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4 Author(s)
Aoki, T. ; Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan ; Matsuo, Jiro ; Insepov, Z. ; Yamada, Isao

Cluster ion implantation using decaborane (B10H14 ) has been proposed as a useful technique for shallow junction formation. In order to examine the characteristics and advantages of cluster ion implantation, molecular dynamics simulations of small B cluster and monomer implantation were performed B1, B4 and B10 are irradiated on Si(001) substrates with acceleration energy of 230 eV/atom so that B4 and B10 are accelerated with 0.92 keV and 2.3 keV, respectively. Those three show the same implant profile and implant efficiency, which agrees with the experimental result of B10H14 implantation. This result suggests that each B atom in a B cluster acts individually in similar way to a monomer ion

Published in:

Ion Implantation Technology Proceedings, 1998 International Conference on  (Volume:2 )

Date of Conference:

Dec 1999