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Properties of cubic boron nitride films prepared by ion beam assisted deposition

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6 Author(s)
Kumagai, M. ; Kanagawa High-Technol. Found., Japan ; Konuma, S. ; Setsuhara, Y. ; Miyake, S.
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Boron nitride films were prepared by ion beam assisted deposition (IBAD). The films were synthesized on Si(100) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions. Properties of cubic boron nitride (cBN) films are studied especially regarding the crystallization of the films and the valence band spectra obtained from X-ray photoelectron spectroscopy (XPS). Structural analysis by Fourier transform infrared spectroscopy (FTIR) and cross-sectional transmission electron microscopy (TEM) confirms that polycrystalline films with a high cBN fraction were synthesized. Valence-band spectra obtained from XPS were measured to provide a method for characterization of the BN phases on the basis of experimental observations for the bulk cBN and hBN samples and theoretical prediction of densities of states

Published in:

Ion Implantation Technology Proceedings, 1998 International Conference on  (Volume:2 )

Date of Conference:

Dec 1999

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