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Dual ion implantation of non-dopant and dopant ions into Si for defect engineering of shallow p+-junctions

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4 Author(s)

Dual ion implantation of F had B into silicon is studied. In a pre-amorphized silicon layer by F+ implants prior to B+ implantation at 10 keV with 3×1015/cm2, broadening of B profile can be suppressed markedly in as-implanted B profiles. For instance, the depth of 0.23 μm at a B concentration of 1×1018/cm3 decreases to 0.18 μm by this pre-amorphization. When these layers are annealed at 950°C, B atoms diffuse rapidly 2.3 times faster in the pre-amorphized layer than in the single B+ implantation. In the high dose F+ implantation at doses above 1×1015/cm2, F is trapped with annealing at the peak of the B profile as well as at the F profile peak and near the amorphous-crystalline interface. The effects of F dose and annealing temperature on the F precipitation are described

Published in:

Ion Implantation Technology Proceedings, 1998 International Conference on  (Volume:2 )

Date of Conference:

Dec 1999