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Preparation of new carbon films by ion-beam-assisted plasma CVD

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4 Author(s)
Fuchigami, K. ; Ishikawajima-Harima Heavy Ind. Co. Ltd., Tokyo, Japan ; Nakai, H. ; Wazumi, Koichiro ; Shinohara, J.

Ion-beam-assisted plasma chemical vapor deposition (ion-beam-assisted plasma CVD) was used in experiments for depositing crystalline thin films of carbon nitride such as β-C3N 4. The films were deposited by a plasma CVD with simultaneous irradiation of high-velocity nitrogen ions. An advantage of this method Is the ability to control crystallinity of deposited films. As a result, crystalline graphite films containing nitrogen atoms were formed. The deposited films contained the maximum nitrogen content of about 2 at.%. Although the aim of depositing crystalline carbon nitride film was not achieved in the present investigation, the method is shown to improve the crystallinity of deposited films

Published in:

Ion Implantation Technology Proceedings, 1998 International Conference on  (Volume:2 )

Date of Conference:

Dec 1999

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