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Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator

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3 Author(s)
Lee, S.S. ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA ; Ramaswamy, R.V. ; Sundaram, V.S.

A P-p-i-n-N, GaAs-AlGaAs, TE/TM mode phase modulator, which has both the high phase shift efficiency of a p-n homojunction modulator and the high speed associated with a P-i-N modulator, is considered by incorporating p- and n-GaAs buffer layers and utilizing the higher order effects in these layers. The device structure is analyzed by considering the individual contributions of both the electrooptic [linear electrooptic (LEO) and quadratic electrooptic (QEO)] effects and the free carrier [plasma (PL) and bandgap shift (BS)] effects. These effects are studied in detail as a function of the reverse bias, operating wavelength, doping concentration, and intrinsic layer thickness. The results are in excellent agreement with the theoretical predictions

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Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 3 )