Referenced Items are not available for this document.
This paper presents a physically based model for the MOS transistors suitable for design and simulation of integrated circuits. The static and dynamic characteristics of the MOSFET are accurately described by single-piece functions of the inversion charge densities at source and drain. A new compact and physical approach to short-channel effects is presented. We have run some tests to compare the performances of our model and widely used MOSFET models
Published in:
Electronics, Circuits and Systems, 1998 IEEE International Conference on
(Volume:1
)
Date of Conference: 1998
- Page(s):
- 491 - 494 vol.1
- Meeting Date :
- 07 Sep 1998-10 Sep 1998
- Print ISBN:
- 0-7803-5008-1
- INSPEC Accession Number:
- 6476142
- Conference Location :
- Lisboa
- Digital Object Identifier :
- 10.1109/ICECS.1998.813369
- Product Type:
- Conference Publications
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