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Low power-low voltage band gap references for flash-EEPROM integrated circuits: design alternatives and experiments

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4 Author(s)
Ripamonti, G. ; Dipt. di Elettronica e Inf., Politecnico di Milano, Italy ; Bertolaccini, M. ; Peritore, R. ; Schippers, S.

Two alternative circuits for very low-supply-voltage bandgap voltage references BGR in a flash memory environment are designed and compared. The circuits allow operation at supply voltages as low as 0.9 V, while requiring as low as 5 μA current. Sensitivity to supply voltage variations is reduced by means of suitable feedback circuits. Experimental results confirm that the BGR operates correctly and can be employed in future ultra-low-supply-voltage flash memory devices

Published in:

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on  (Volume:2 )

Date of Conference:

5-8 Sep 1999