Low power-low voltage band gap references for flash-EEPROM integrated circuits: design alternatives and experiments

Two alternative circuits for very low-supply-voltage bandgap voltage references BGR in a flash memory environment are designed and compared. The circuits allow operation at supply voltages as low as 0.9 V, while requiring as low as 5 /spl mu/A current. Sensitivity to supply voltage variations is reduced by means of suitable feedback circuits. Experimental results confirm that the BGR operates correctly and can be employed in future ultra-low-supply-voltage flash memory devices.