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1.5 mu m lithography Si- and Si/SiGe-bipolar transistors for ICs operating at 15 Gbit/s and above

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2 Author(s)
Schreiber, H.‐U. ; Ruhr-Univ., Bochum, Germany ; Albers, J.N.

Employing the simple, but optimised technology described by the authors, a 15 Gbit/s 2:1 multiplexer IC was implemented. Circuit simulations which are based on measured transistor data predict superior operating speeds using the Si/SiGe HBT in development at the University of Bochum.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 16 )