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Demonstration of high performance heterojunction field effect transistor in InAlAs/InGaAs/InAlGaAs/InP material system

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2 Author(s)
Mand, R.S. ; Furukana Electr. Technol. Inc., Santa Clara, CA, USA ; Simmons, J.G.

The heterojunction field effect transistor (HFET) is demonstrated for the first time in InAlAs/InGaAs/InAlGaAs/InP material system using molecular beam epitaxy (MBE). A tungsten gate selfaligned HFET structure was made by ion imitation and rapid thermal annealing. The 1.0 mu m self-aligned gate HFET exhibited room temperature transconductance of 490 mS/mm with cutoff frequency of 9 GHz.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 16 )

Date of Publication:

1 Aug. 1991

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