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0.23 mu m gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE

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6 Author(s)
Tong, M. ; Coordinated Sci. Lab., Illinois Univ., Urbana-Champaign, IL, USA ; Ketterson, A. ; Nummila, K. ; Adesida, I.
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Modulation-doped field effect transistors (MODFETs) with 0.23 mu m gate lengths have been fabricated on an InAlAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800 mS/mm, and unity current gain cutoff frequency ft of over 120 GHz at room temperature have been achieved. These gm and ft values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 16 )