By Topic

Convergence issues in resonant tunneling diode circuit simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
M. Bhattacharya ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; P. Mazumder

Due to its status as the fastest switching semiconductor device and its bistable nature, the resonant tunneling diode (RTD) is considered to be one of the most promising devices for future-generation high-performance VLSI systems. However, popular circuit simulators, such as SPICE, can encounter direct current (DC) and transient convergence problems while simulating RTD-based circuits because of the negative differential resistance (NDR) in the device's current-voltage characteristics. In this paper, we study the nature of these convergence problems and provide several solution techniques that can be easily incorporated into SPICE-like circuit simulators

Published in:

VLSI Design, 2000. Thirteenth International Conference on

Date of Conference: