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Low threshold current lateral injection lasers on semi-insulating substrates fabricated using Si impurity-induced disordering

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4 Author(s)

The results of a laser design that uses dual Si impurity-induced disordering stripes to both bury the active region and provide lateral electron injection are reported. Without heatsinking, lasers have room temperature CW threshold current as low as 2.77 mA and a single facet external quantum efficiency as high as 30%.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 15 )