Referenced Items are not available for this document.
The results of a laser design that uses dual Si impurity-induced disordering stripes to both bury the active region and provide lateral electron injection are reported. Without heatsinking, lasers have room temperature CW threshold current as low as 2.77 mA and a single facet external quantum efficiency as high as 30%.
Published in:
Electronics Letters
(Volume:27
,
Issue:
15
)
Date of Publication: 18 July 1991
- Page(s):
- 1372 - 1374
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 3990009
- Digital Object Identifier :
- 10.1049/el:19910863
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 18 July 1991
- Sponsored by :
- Institution of Engineering and Technology
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