Cart (Loading....) | Create Account
Close category search window
 

Electrical behaviour associated with defect tails in germanium implanted silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Nejim, A. ; Sch. of Electron. Eng., Inf. Technol. & Math., Surrey Univ., Guildford, UK ; Gwilliam, R.M. ; Emerson, N.G. ; Knights, A.P.
more authors

In this study the impact of the defect tails generated by germanium implantation into n-type silicon wafers on the deep energy states, the doping profiles and mobilities, are investigated. 100 mm (100) silicon wafers with a base doping concentration of 3×1015/cm3 have been implanted with 80 keV germanium on the Danfysik DF1090 high current implanter using instantaneous current density of 5 μA/cm2-95 μA/cm2, which correspond to power loading values of 0.4 and 7.6 W/cm2 respectively. Channelling Rutherford Backscattering analysis of a wafer implanted with 1×1016 Ge/cm2 and a dose rate of 80 μA/cm 2 indicates a defect tail extending to 0.65 μm compared with 0.35 μm from a similar implant using 20 μA/cm2. Deep Level Transient Spectroscopy (DLTS) measurements of samples implanted with 3×x1014 Ge/cm2 followed by a regrowth anneal of 700°C for 20 mins reveal a high concentration of deep levels beyond the projected range of germanium of 58 nm at depths extending from 0.15 μm to depths greater than 0.4 μm. The main peak indicates a deep level at 0.36 eV. The increase in the dose rate from 5 μA/cm2 to 95 μA/cm2 is accompanied by a 5 times reduction of the 0.35 eV trap concentration. This difference could be attributed to the dynamic annealing effects during the implant using 95 μA/cm2

Published in:

Ion Implantation Technology Proceedings, 1998 International Conference on  (Volume:1 )

Date of Conference:

1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.