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Photoresist effects on wafer charging control: current-voltage characteristics measured with Charm-2 monitors during high-current As + implantation

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5 Author(s)
Current, M. ; Appl. Mater. Inc., Santa Clara, CA, USA ; Foad, Majeed A. ; Brown, S. ; Lukaszek, W.
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The effects of ion energy, accumulated dose, photoresist coverage and patterning were studied for As+ implants at 40, 60 and 120 keV and total doses from 1×1014 to 1016 As/cm2. The effect of photoresist coverage, ion energy and dose on positive and negative potentials and j-V characteristics are presented. J-V data are fit with a beam plasma model that describes both positive and negative charging with a consistent set of plasma parameters

Published in:
Ion Implantation Technology Proceedings, 1998 International Conference on  (Volume:1 )

Date of Conference: 1999

Page(s):
490 - 493 vol.1
Meeting Date :
22 Jun 1998-26 Jun 1998
Print ISBN:
0-7803-4538-X
INSPEC Accession Number:
6506360
Conference Location :
Kyoto
Digital Object Identifier :
10.1109/IIT.1999.812159

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