Cart (Loading....) | Create Account
Close category search window

Comparison of charge control technologies for advanced high current ion implantation systems

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Erokhin, Y. ; Semicond. Equip. Div., Eaton Corp., Beverly, MA, USA ; Sawyer, W. ; Mack, M.E. ; Santiesteban, R.
more authors

Reduction of gate oxide thickness with device design rule dictates increasingly precise compensation of ion beam positive space charge with electrons and reduction of beam potential. In the present work we investigate charging damage to thin gate oxides due to high current ion implants performed on implanters equipped with different types of hardware for beam space charge neutralization. We are comparing GSD-200/E2 high current implanters equipped with either Secondary Electron Flood (SEF) or Plasma Electron Flood (PEF) and the ULE2 ultra-low energy high current implanter, which employs the latest charge control technology (Plasma Cell) introduced by Eaton. Gate-antenna type capacitors and SPIDER structures were used to evaluate beam neutralization. We performed charge-to-breakdown (QBD) measurements on MOS capacitors to evaluate gate oxide wearout, and Vt and charge pumping measurements on SPIDER structures to measure concentration of charge traps generated within the oxide and at the Si/SiO2 interface. Good correlation of the data collected from QBD charge pumping, device parametrics (Vt) measurements, and readings of in situ beam potential monitors is demonstrated. Experimental results demonstrate that Plasma Cell technology employed in the ULE2 family of ultra-low energy implanters under optimum conditions provides the best charging performance and allows achievement of minimal gate oxide wearout and lowest concentration of charge traps at the gate stack SiSiO2 interface in the SPIDER structures

Published in:

Ion Implantation Technology Proceedings, 1998 International Conference on  (Volume:1 )

Date of Conference:


Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.