Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Suppression of abnormal oxidation of WSix/P-doped Si stack gate electrode during gate re-oxidation by additional nitrogen ion implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
In-Seok Yeo ; Semicond. Adv. Res. Div., Hyundai Electr. Ind. Co. Ltd., Kyoungki-do, South Korea ; Lee, Sang-Do ; Lee, Jeong-Youb ; Lee, Sang-Moo
more authors

We developed an additional nitrogen ion implantation process to suppress the abnormal oxidation of polycrystalline WSix/P-doped Si stack gate electrode during gate re-oxidation around 750°C. The abnormal oxidation was attributed to oxidation during gate re-oxidation, resulting in deformation of the gate electrode profile. A method to suppress the abnormal oxidation is to employ pre-annealing in nitrogen ambient over 850°C before gate re-oxidation; however, it leads to unstable pMOSFETs due to high thermal budget. Thus, we introduced the nitrogen implantation (N+ 10 keV/5×1015 cm-2) prior to gate re-oxidation to improve the oxidation resistance of WSix. The abnormal oxidation of WSix was effectively suppressed by nitrogen ion implantation. Moreover, the additional nitrogen ion implantation did not degrade gate oxide integrity (GOI)

Published in:

Ion Implantation Technology Proceedings, 1998 International Conference on  (Volume:1 )

Date of Conference: