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Suppression of abnormal oxidation of WSix/P-doped Si stack gate electrode during gate re-oxidation by additional nitrogen ion implantation

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7 Author(s)
In-Seok Yeo ; Semicond. Adv. Res. Div., Hyundai Electr. Ind. Co. Ltd., Kyoungki-do, South Korea ; Lee, Sang-Do ; Lee, Jeong-Youb ; Lee, Sang-Moo
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We developed an additional nitrogen ion implantation process to suppress the abnormal oxidation of polycrystalline WSix/P-doped Si stack gate electrode during gate re-oxidation around 750°C. The abnormal oxidation was attributed to oxidation during gate re-oxidation, resulting in deformation of the gate electrode profile. A method to suppress the abnormal oxidation is to employ pre-annealing in nitrogen ambient over 850°C before gate re-oxidation; however, it leads to unstable pMOSFETs due to high thermal budget. Thus, we introduced the nitrogen implantation (N+ 10 keV/5×1015 cm-2) prior to gate re-oxidation to improve the oxidation resistance of WSix. The abnormal oxidation of WSix was effectively suppressed by nitrogen ion implantation. Moreover, the additional nitrogen ion implantation did not degrade gate oxide integrity (GOI)

Published in:

Ion Implantation Technology Proceedings, 1998 International Conference on  (Volume:1 )

Date of Conference:

1999