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Low (2.0 kA/cm2) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15 degrees off

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3 Author(s)
Kikuchi, A. ; Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan ; Kishino, K. ; Kaneko, Y.

Very low threshold current density operation of 630 nm wavelength range GaInP/AlInP multiquantum well (MQW) lasers grown by gas source molecular beam epitaxy has been achieved. The reduction of threshold current density Jth was obtained by use of 15 degrees off

Published in:

Electronics Letters  (Volume:27 ,  Issue: 14 )