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Browse Journals & Magazines > Electronics Letters ...> Volume:27 Issue:14 Help

Low (2.0 kA/cm2) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15 degrees off

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3 Author(s)
Kikuchi, A. ; Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan ; Kishino, K. ; Kaneko, Y.

Very low threshold current density operation of 630 nm wavelength range GaInP/AlInP multiquantum well (MQW) lasers grown by gas source molecular beam epitaxy has been achieved. The reduction of threshold current density Jth was obtained by use of 15 degrees off

Published in:
Electronics Letters  (Volume:27 ,  Issue: 14 )

Date of Publication: 4 July 1991

Page(s):
1301 - 1303
ISSN :
0013-5194
INSPEC Accession Number:
3969954
Digital Object Identifier :
10.1049/el:19910814
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
4 July 1991
Sponsored by :
Institution of Engineering and Technology

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